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Sapphire > Sapphire Substrates for Blue LEDs

Crystal Structure Hexagonal
Lattice Constant Å a - 4,765
c - 13,000
Orientation C-axis (0001) ± 0.1°
Diameter: 2"
Diameter: 3"
50.80 ± 0.05mm
76.2 ± 0.05mm
Thickness: 2" dia
Thickness: 3" dia
330 - 430 ± 50 µm
380 - 480 ± 50 µm 
TTV: 2" dia
TTV: 3" dia
<20 µm
<25 µm
Bow: 2" dia
Bow: 3" dia
<20 µm
<25 µm
Front Surface Epi polish
Backside Fine ground or Polished
Flatness <5 microns
Surface roughness (Ra) <0.3nm
Orientation Flat: 2" dia
Orientation Flat: 3" dia
16mm ± 0.5 mm
22mm ± 0.5 mm
Primary Flat Location A-axis [11-20] ± 0.5° or
M-axis [10-10] ± 0.5°
Secondary Flat 90° counterclockwise to primary
Bow <2 µm, misoriented substrates, other wafer tolerances available
Control Methods Raw sapphire: inductively coupled argon plasma
Crystal Quality: polarized light, focused light
Orientation: X-ray
Surface quality: AFM & Interferometer.

* Call for specifications on other sizes.

Additional substrates for III-V nitride film deposition
Substrates for Superconductor Thin Films
Sapphire Table of General Properties
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