Sapphire has a hexagonal/rhombohedral structure and a number
of properties are dependant on the orientation of the crystal.
For epitaxial growth of films, different orientations will
offer a range of lattice constants to match the epi material.
- C-plane sapphire substrates are used
to grow III-V and II-VI compounds such as GaN for blue
LED and laser diodes. In addition, it is useful for infrared
- A-plane sapphire substrates provide
a uniform dielectric constant and high insulation for
hybrid microelectronic applications. High Tc superconductors
can be grown with a-plane Sapphire substrates.
- R-plane sapphire substrates are used
for the hetero-epitaxial deposition of silicon for microelectronic
IC applications. Sapphire is an excellent choice for
hybrid substrates such as microwave IC's because of its
high dielectric constant. In addition, when filmed with
an epitaxial silicon process, high speed IC and pressure
transducers can be created. Growing thallium, other superconducting
components, high impedance resistors, and GaAs are other
Sapphire Substrates for Blue LEDs
High purity optical grade, epi-ready wafers for blue LED
applications are available. See table for standard
specifications. Please call for pricing and availability
of custom specifications.
Compare sapphire with other substrates:
- III-V substrate
Optics and Windows
We offer sapphire windows and sapphire optics - up to 8" diameter
and as small as a few millimeters. We can provide various
A/R coatings as needed.
Because of its unique properties,
sapphire is often machined into precision shapes for instruments
and high temperature applications. Sapphire can be bonded
to alumina or sapphire as well as other metal parts using
glassy or non glassy fritz; or it can be metalized and brazed
into metal holders.
More information about
Sapphire growth methods and grades.