Semiconductor Wafers
Semiconductor Wafers
Marketech offers a range of semiconductor wafers using the CZ and float zone growth techniques. The crystal boules are pulled or grown using the most up-to-date equipment and under carefully controlled conditions that match industry standards for quality.
Elemental Silicon Material
Standard silicon single crystals are grown with diameters from 51 to 150 mm from poylcrystal material with donor concentrations corresponding to a resitivity of 300 ohm cm. Standard "p type" silicon boules are doped with boron and "n type" are doped with antimony or arsenic with oxygen content controlled to 6 - 9 atoms/cm3.
| Techical Data | |||||||
|---|---|---|---|---|---|---|---|
| Growth Method | Czocharlski-LED | Float Zone | |||||
| Diameters | 51, 76, 100, 150 mm | 33, 38, 51, 63.5, 76.5 | |||||
| Std. Orientation | <111>, <100> | <111>, <100> | |||||
| Type | p-type | n-type | p-type | n-type | |||
| Doping | Boron | Phos | Sb | As | Boron | Phos | NDT |
|
Resistivity Range Ohm-cm |
0.05 - 50.0 | 0.10 - 25.0 | .008 - 0.02 | <.007 | 20 - 300 | 6 - 200 | 5 - 200 |
Note: The above parameters are standard production. Upon request, we can adjust for other requirements such as diameter, resistivity ranges, RRV, oxygen content, etc.
Elemental Germanium
Marketech offers elemental single crystal germanium crystals up to 3" diameter grown using advanced CZ techniques. We offer a range of diameters and thickness with epi ready surfaces or standard optical polishes. Mixed SisGe1-x crystals are also available. Contact our office for details.
Compound III-V Materials
These materials are epi ready and are also available as polycrystal wafers and as seed crystals. Check with Marketech for availability and pricing.
| Material: | GaAs | ||||
| Growth Method | LEC | HB-GF | |||
| Type | n | p | Semi-insulating | n | |
| Dopant | Te | Zn | Cr | none | Si |
| Orientation | <100> � 20' or 2 - 3° of <100> toward <110> | ||||
| Diameter - mm | 40 - 51 - 76 - 100 | ||||
| Thickness - �m | 375 - 400 - 500 | ||||
| EDP cm-2 | 5 - 8 *104 | ||||
| CC -3 | 5*1017 - 5* 1019 | ||||
| Mobility cm2/Vs | >2000 | >90 | >3000 | >4000 | >1500 |
| Resistivity | 1 x 107 | 1 x 107 | |||
| Material: | InP | GaP | |||
| Growth Method | Czochralski - LEC | ||||
| Type | n | p | Semi-Insul | n | |
| Dopant | S, Sn | Zn | Fe | S, Te | |
| Orientation | <100> � 20' or 2 - 3° of <100> toward <110> | ||||
| Diameter - mm | 40 - 51 | ||||
| Thickness - �m | 375 - 400 | ||||
| EDP cm-2 | 5 x 1017 | 3.5 x 1017 | |||
| CC -3 | 5x10-17 | >1000 | 3.5 x 1017 - 2 x 1017 | ||
| Mobility cm2/Vs | >1600 | >40 | |||
| Resistivity | 1 x 107 | ||||
| Material: | InAs | GaSb | InSb |
| Growth Method | CZ - LEC | CZ | CZ |
| Dopant | un-doped | ||
| Size | 2" |
Wafers with Epi Layers
Marktech offers both MOCVD and CVD deposition on GaAs and InP wafers using state of the art deposition and testing equipment. Contact us for details.
| MOCVD Layers: | GaAs, AlGaAs, InP, InGaAs, InGaAsP, InGaP, InGaAlP |
| CVD Layers: | GaAs, GaAsP, InP |
Last Updated on 6/3/98
By Jerry Spieckerman