|
Refractory Metals - Composites -Special Alloys -
Ceramics -Tungsten - Titanium
Back to Sapphire
|
Crystal Structure |
Hexagonal |
|
Lattice Constant A |
a - 4,765
c - 13,000 |
|
Orientation |
C-axis (0001) ± 0.1° |
|
Diameter: 2"
Diameter: 3" |
50.80 ± 0.05 mm
76.2 ± 0.05 mm |
|
Thickness: 2" dia
Thickness: 3" dia |
330 - 430 ± 50µm
380 - 480 ± 50µm |
|
TTV: 2"dia
TTV: 3" dia |
<20 µm
<25 µm |
|
Bow: 2" dia
Bow: 3" dia |
<20 µm
<25 µm |
|
Front Surface |
Epi polish |
|
Backside |
Fine ground or Polished |
|
Flatness |
<5 microns |
|
Surface
roughness (Ra) |
<0.3nm |
|
Orientation Flat: 2" dia
Orientation Flat: 3" dia |
16 mm ± 0.5 mm
22 mm ± 0.5 mm |
|
Primary Flat Location |
A-axis [11-20] ± 0.5° or
M-axis [10-10] ± 0.5° |
|
Secondary Flat |
90° counterclockwise to primary |
|
Bow |
<2 µm, misoriented substrates,
other wafer tolerances available |
|
Control methods |
Raw sapphire: inductively coupled argon plasma
Crystal Quality: polarized light, focused light
Orientation: X-ray
Surface quality: AFM & Interferometer. |
|
Call 360-379-6707 for specifications on other sizes. |
|
|
|
|
| 
